2SK3233 데이터시트 - Hitachi -> Renesas Electronics
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2SK3233
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Hitachi -> Renesas Electronics
Features
• Low on-resistance: RDS(on)= 1.1 Ωtyp.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
• Avalanche ratings
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