2SK3233 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK3233

N-channel MOSFET high speed power switching, 500V, 5A

Hitachi -> Renesas Electronics 

2SK3233

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1369 (Z)

1st. Edition

Mar. 2001

Features

• Low on-resistance: RDS(on) = 1.1 Ω typ.

• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)

• Avalanche ratings

Outline

TO–220CFM

D

G

123

1. Gate

2. Drain

3. Source

S

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