2SK3062 데이터시트 - NEC => Renesas Technology
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2SK3062
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NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)
RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)
• Low Ciss: Ciss= 5200 pF TYP.
• Built-in gate protection diode
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