2SK3062 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK3062 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
FEATURES
• Low on-state resistance
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 5200 pF TYP.
• Built-in gate protection diode
2SK3062-S
2SK3062-ZJ
2SK3062-Z
TO-262
TO-263
TO-220SMD
Notes TO-220SMD package is produced only in
Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, −10
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±70
A
±280
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150 °C
IAS
35
A
EAS
122.5
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13101EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1998,1999
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