2SJ668 데이터시트 - Toshiba
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2SJ668
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Toshiba
Relay Drive, DC/DC Converter and Motor Drive
APPLICATIONs
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
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제조사
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
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