2SJ668 데이터 시트보기 (PDF) - Toshiba
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2SJ668 Datasheet PDF : 6 Pages
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RDS (ON) − Tc
0.4
Common source
Pulse test
0.3
0.2
VGS = −4 V
0.1
ID = −5 A
−2.5
−1.2
−5
−2.5
−1.2
VGS = −10 V
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SJ668
10
Common source
Tc = 25°C
Pulse test
IDR − VDS
−10
−5
−3
1
−1
VGS = 0 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage VDS (V)
Capacitance – VDS
10000
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1000
Ciss
100
Coss
10
−0.1
Crss
−1
−10
−100
Drain-source voltage VDS (V)
Vth − Tc
−2.0
Common source
VDS = −10 V
ID = 1 mA
−1.6
Pulse test
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD − Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output
characteristics
−50
VDS
−25
Common source
ID = −5 A
−40
Ta = 25°C
−20
Pulse test
−30
−15
−20
−10
0
0
−12V
−24V
VDD = −48 V
VGS
5
10
15
20
25
Total gate charge Qg (nC)
−10
−5
0
30
4
2009-07-13
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