2SB649 데이터시트 - New Jersey Semiconductor
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2SB649
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New Jersey Semiconductor
DESCRIPTION
• High Collector Current-lc=-i.5A
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min)
• Good Linearity of hFE
• Low Saturation Voltage
• Complement to Type 2SD669
APPLICATIONS
• Power amplifier applications
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