2SB649 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SB649

Silicon PNP Power Transistor

New Jersey Semiconductor 

/£ii£u

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Dna.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB649

DESCRIPTION

• High Collector Current-lc=-i.5A

• High Collector-Emitter Breakdown Voltage-

: V(BR)CEo=-120V(Min)

• Good Linearity of hFE

• Low Saturation Voltage

• Complement to Type 2SD669

APPLICATIONS

• Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-160

V

VCEO Collector-Emitter Voltage

-120

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-1.5

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25°C

PC

Collector Power Dissipation

@ Ta=25°C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-3

A

20

W

1

150

•c

-55-150

°c

• '-<

1

,' 2 2

FIH:1 Knitter

2 Collector

3 Base

TO- 126 package

!~~B~~! [,-F -H

!A

ri : Q

1 ; IT ii <¥ »

T:

A

\

rH - -v

f

D— 1

i.

r-J

i:*-R

-*t G r •—

$r j jD

\2 3

mm

DIM MIN

A 10.70

B 7.70

C 2.60

D 0.66

F 3.10

G 4.48

MAX

10.95

7.90

2.80

0.56

3.30

4.68

H 2.00 2.20

J 1.35 1.55

K 15.30 16.30

0 3.70 3.90

R 0.44 0.60

V 1.17 1.37

NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going

to press. I lowever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders.

Qualify Semi-Conductors

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