63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.

FEATUREs
 63A, 1200V, TC = 25^oC
 1200V Switching SOA Capability
 Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
 Short Circuit Rating
 Low Conduction Loss