63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

FEATUREs
• 63A, 1200V, TC= 25^oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . .  340ns at TJ= 150^oC
• Short Circuit Rating
• Low Conduction Loss