P/N + 설명 + 콘텐츠 검색
부품명(s) : W19B320BT W19B320BB
Winbond
상세내역 : 2.7~3.6-volt single bank CMOS flash memory
(Rev - 2008)
Winbond
상세내역 : 2.7~3.6-volt single bank CMOS flash memory
Silicon Storage Technology
상세내역 : 2 Mbit flash + 1 Mbit SRAM ComboMemory
Silicon Storage Technology
상세내역 : 2 Mbit flash + 1 Mbit SRAM ComboMemory (Rev - 2001)
Silicon Storage Technology
상세내역 : 4 Mbit flash + 1 Mbit or 256 Kbit SRAM ComboMemory
Micron Technology
상세내역 : SYNCFLASH® memory
Hynix Semiconductor
상세내역 : 16 Megabit (2M x 8/1M x16) Low Voltage, Dual bank, Simultaneous Read/Write flash memory
부품명(s) : SST38VF166-70-4C-EK SST38VF166
Silicon Storage Technology
상세내역 : 16 Megabit flashbank memory
Hynix Semiconductor
상세내역 : 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual bank, Simultaneous Read/Write, flash memory
부품명(s) : CMOS-6 CMOS-6A CMOS-6V CMOS-6X
NEC => Renesas Technology
상세내역 : 1.0-MICRON CMOS GATE ARRAYS
부품명(s) : CMOS-4 CMOS-4A
NEC => Renesas Technology
상세내역 : 1.5-Micron CMOS-4 and -4A
부품명(s) : HY29DS322 HY29DS323
Hynix Semiconductor
상세내역 : 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual bank, Simultaneous Read/Write, flash memory
Unspecified
상세내역 : 8 Mbytes flash memory
부품명(s) : M5M29GB/T161BWG
MITSUBISHI ELECTRIC
상세내역 : 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE flash memory
Fujitsu
상세내역 : 64 M (8 M ×8/4 M ×16) BIT flash memory
Micron Technology
상세내역 : SYNCFLASH® memory
부품명(s) : HN29V1G91T-30
Renesas Electronics
상세내역 : 128M × 8-bit AG-AND flash memory
Silicon Storage Technology
상세내역 : 16 Mbit Concurrent Superflash + 8 Mbit SRAM ComboMemory
Fujitsu
상세내역 : 64 M (8 M X 8/4 M X 16) BIT Dual Operation
Samsung
상세내역 : 256Mb B-die Page NOR flash