GENERAL DESCRIPTION
The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0].

The HY29DS16x Flash memory array is organized into 39 sectors in two banks. Bank 1 contains eight 8 Kbyte boot/parameter sectors and 3 or 7 larger sectors of 64 Kbytes each, depending on the version of the device.

The device features simultaneous read/write operation which allows the host system to invoke a program or erase operation in one bank and immediately and simultaneously read data from the other bank, except if that bank has any sectors marked for erasure, with zero latency. This releases the system from waiting for the completion of program or erase operations, thus improving overall system performance.