R6030ENZ4 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6030ENZ4

Nch 600V 30A Power MOSFET

ROHM Semiconductor 

R6030ENZ4

　　　　　　

　 　 　 　 　 　 　 　 Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Source current

Pulsed source current

IS*1

TC = 25℃

ISP*2

-

-

30

A

-

-

80

A

Source-Drain voltage

VSD*5 VGS = 0V, IS = 30A

-

- 1.5 V

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

trr*5

Qrr*5

IS = 30A

di/dt = 100A/μs

Irr*5

- 660 -

ns

-

15

-

μC

-

45

-

A

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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