R6030ENZ4 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6030ENZ4

Nch 600V 30A Power MOSFET

ROHM Semiconductor 

R6030ENZ4

　 　 　 　　 　

lThermal resistance

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

　 　 　 　 　 　 　 　 Datasheet

　

　 　　　　　　　　　　　　　　　　

Symbol

RthJC*4

RthJA

Tsold

Values

Unit

Min. Typ. Max.

-

- 0.41 ℃/W

-

- 30 ℃/W

-

- 265 ℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Drain - Source breakdown

voltage

Zero gate voltage

drain current

Gate - Source leakage current

Gate threshold voltage

Static drain - source

on - state resistance

Gate resistance

V(BR)DSS VGS = 0V, ID = 1mA

VDS = 600V, VGS = 0V

IDSS Tj = 25°C

Tj = 125°C

IGSS VGS = ±20V, VDS = 0V

VGS(th) VDS = 10V, ID = 1mA

VGS = 10V, ID = 14.5A

RDS(on)*5 Tj = 25°C

Tj = 125°C

RG f = 1MHz, open drain

Values

Unit

Min. Typ. Max.

600 -

-

V

　

　

　

-

- 100 μA

-

- 1000

-

- ±100 nA

2.0 - 4.0 V

　

　

　

- 0.115 0.130 Ω

- 0.255 -

- 3.6 - Ω

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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