R6030ENZ4 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6030ENZ4

Nch 600V 30A Power MOSFET

ROHM Semiconductor 

R6030ENZ4

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Ciss VGS = 0V

- 2100 -

Coss VDS = 25V

- 1900 - pF

Crss f = 1MHz

- 190 -

td(on)*5 VDD ⋍ 300V, VGS = 10V

-

40

-

tr*5

td(off)*5

ID = 15A

RL ⋍ 20Ω

- 55 -

ns

- 190 -

tf*5 RG = 10Ω

- 60 -

lGate charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Qg*5

Qgs*5

Qgd*5

V(plateau)

VDD ⋍ 300V

ID = 30A

VGS = 10V

VDD ⋍ 300V, ID = 30A

Values

Unit

Min. Typ. Max.

- 85 -

- 15 - nC

- 45 -

- 6.5 -

V

*1 Limited only by maximum channel temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L≒50mH, VDD=50V, RG=25Ω, Starting Tj=25℃

*4 TC=25℃

*5 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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