STTH2003CGY-TR 데이터 시트보기 (PDF) - STMicroelectronics
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STTH2003CGY-TR Datasheet PDF : 7 Pages
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Characteristics
STTH2003C-Y
Figure 5. Reverse recovery time versus dIF/dt Figure 6. Softness factor (tb/ta) versus dIF/dt
(90% confidence, per diode)
(typical values, per diode)
trr(ns)
100
80
60
40
IF=IF(AV)
IF=2 x IF(AV)
IF=0.5 x IF(AV)
VR=200V
Tj=125°C
S factor
0.60
0.50
0.40
0.30
0.20
VR=200V
Tj=125°C
20
0
0
0.10
dIF/dt(A/µs)
0.00
50 100 150 200 250 300 350 400 450 500
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Relative variation of dynamic
Figure 8.
parameters versus junction
temperature (reference: Tj = 125 °C)
tfr(ns)
500
S factor
400
Forward recovery time versus dIF/dt
(90% confidence, per diode)
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
300
IRM
Tj(°C)
50
75
100
200
100
0
125
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 9.
Thermal resistance, junction to
ambient, versus copper surface
under tab
Figure 10. Average forward current versus
ambient temperature
( = 0.5per diode)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
5
10
Printed circuit board FR4,
copper thickness: 35 µm
SCu(cm²)
15
20
25
30
35
40
12 IF(AV)(A)
11
10
9
8
7
6
5
4
3
2
1
0
0
25
Rth(j-a) = Rth(j-c)
Tamb(°C)
50
75
100
125
150
175
4/7
Doc ID 022396 Rev 1
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