STTH2003CGY-TR 데이터 시트보기 (PDF) - STMicroelectronics

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STTH2003CGY-TR

Automotive high efficiency ultrafast diode

STMicroelectronics 

Characteristics

1

Characteristics

STTH2003C-Y

Table 2.

Symbol

Absolute ratings (limiting values, per diode)

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

IF(RMS) Forward current rms

IF(AV) Average forward current,  = 0.5

IFSM Surge non repetitive forward current

Tstg Storage temperature range

Tj Operating junction temperature range

300

V

48

A

Tc = 140 °C

Per diode

10

A

Per device

20

tp = 10 ms sinusoidal (Tj = 25 °C)

110

A

-65 to + 175 °C

-40 to + 175 °C

Table 3.

Symbol

Thermal resistance

Rth(j-c) Junction to case

Parameter

Per diode

Total

Value (Max.)

2.5

1.3

Unit

°C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IR(1) Reverse leakage current

VF(2) Forward voltage drop

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

VR = 300 V

IF = 10 A

1. Pulse test: tp = 5 ms,  < 2%

2. Pulse test: tp = 380 µs,  < 2%

To evaluate the conduction losses use the following equation:

P = 0.75 x IF(AV) + 0.025 IF2(RMS))

20

µA

30

300

1.25

V

0.85

1

2/7

Doc ID 022396 Rev 1

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