STTH3R06-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3R06-Y Datasheet PDF : 9 Pages
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Characteristics
STTH3R06-Y
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
450 QRR(nC)
400
VR = 400 V
Tj = 125 °C
IF = 2 x IF(av)
350
300
250
IF = IF(av)
200
150
IF = 0.5 x IF(av)
100
50
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8. Reverse recovery softness factor
versus dIF/dt (typical values)
3.0 Sfactor
IF = IF(av)
VR = 400 V
Tj = 125 °C
2.5
2.0
1.5
1.0
0.5
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 9. Relative variation of dynamic
parameters versus junction temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
Sfactor
IRM
QRR
Tj(°C)
IF = IF(av)
VR = 400 V
Reference: Tj = 125 °C
50
75
100
125
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
10 VFP(V)
IF = IF(AV)
Tj = 125 °C
8
6
4
2
dIF/dt(A/µs)
0
20
40
60
80 100 120 140 160 180 200
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus reverse
(typical values)
voltage applied (typical values)
tFR(ns)
160
140
IF = IF(AV)
VFR = 2.0 V
Tj = 125 °C
C(pF)
100
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
120
100
80
10
60
40
20
dIF/dt(A/µs)
0
1
20
40
60
80 100 120 140 160 180 200
1
VR(V)
10
100
1000
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DocID026720 Rev 1
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