STTH3R06-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3R06-Y Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STTH3R06-Y
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
Tj = -40 to +175 °C
600
V
IF(AV) Average forward current, square waveform TL = 90 °C δ = 0.5
3
A
IFSM Forward Surge current
tp = 10 ms
30
A
Tstg Storage temperature range
-65 to + 175 °C
Tj(1) Operating temperature range
-40 to + 175 °C
1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
Symbol
Rth(j-l) Junction to lead
Table 3. Thermal resistance
Parameter
Value
16
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
VR = 600 V
-
Tj = 150 °C
-
VF(2) Forward voltage drop
Tj = 25 °C
IF = 3A
-
Tj = 150 °C
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
3
µA
15 100
1.9
V
1.1 1.4
To evaluate the conduction losses use the following equation:
P = 1.1 x IF(AV) + 0.1 x IF2(RMS)
Symbol
Table 5. Dynamic electrical characteristics
Parameter
Tests conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
Tj = 25 °C
IF = 1 A, dIF/dt = -50 A/µs
VR = 30 V
-
tfr Forward recovery time
-
VFP
Forward recovery
voltage
Tj = 25 °C
IF = 3 A, dIF/dt = 100 A/µs,
VFR = 2.0 V
-
35 50
ns
130
5V
2/9
DocID026720 Rev 1
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