MMG3004NT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMG3004NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

21

0

20

TC = 25C

19

--40C

85C

18

VDC = 5 Vdc

17

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 7. Small--Signal Gain (S21) versus

Frequency

--2

--4

--6

TC = 85C

--8

VDC = 5 Vdc

--40C

25C

--10

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 8. Input Return Loss (S11) versus

Frequency

--5

--7

TC = --40C

--9

25C

--11

85C

--13

VDC = 5 Vdc

--15

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 9. Output Return Loss (S22) versus

Frequency

47

45

TC = 25C

43

--40C

41

85C

39

VDC = 5 Vdc

1 MHz Tone Spacing

37

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 11. Third Order Output Intercept

Point versus Frequency

29

28

TC = 25C

85C

--40C

27

26

VDC = 5 Vdc

25

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 10. P1dB versus Frequency

10

8

6

TC = 85C

4

--40C

25C

2

VDC = 5 Vdc

0

840

870

900

930

960

f, FREQUENCY (MHz)

Figure 12. Noise Figure versus Frequency

MMG3004NT1

6

RF Device Data

Freescale Semiconductor, Inc.

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