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MMG3004NT1 Datasheet PDF : 21 Pages
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3004NT1 is a general purpose amplifier that is internally
prematched and designed for a broad range of Class A, small--signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 400 to 2200 MHz such as cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small--signal RF.
Features
Frequency: 400--2200 MHz
P1dB: 27 dBm @ 2140 MHz
Small--Signal Gain: 17 dB @ 2140 MHz
Third Order Output Intercept Point: 44 dBm @ 2140 MHz
Single 5 V Supply
Internally Prematched to 50 Ohms
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
Document Number: MMG3004NT1
Rev. 9, 10/2014
MMG3004NT1
400--2200 MHz, 17 dB
27 dBm
InGaP HBT GPA
PQFN 5 5
Table 1. Typical Performance (1)
Characteristic
900 1960 2140
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp
19.5 16.5 17 dB
Input Return Loss
(S11)
IRL
--7.5 --8
--8 dB
Output Return Loss
(S22)
ORL --10 --12 --12 dB
Power Output @ 1dB P1dB 27 27
Compression
27 dBm
Third Order Output
Intercept Point
OIP3
44 44
44 dBm
1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol Value
VDC
6
IDC
400
Pin
18
Tstg --65 to +150
TJ
150
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 90C, 5 Vdc, 260 mA, no RF applied
RJC
23.2
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2005--2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3004NT1
1
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