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MMG3004NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

50 OHM TYPICAL CHARACTERISTICS: 1900--2200 MHz

--30

VDC = 5 Vdc, f = 1960 MHz

Single--Carrier IS--95, 9 Channel Forward

--35 750 kHz Measurement Offset

30 kHz Measurement Bandwidth

--40

--45

TC = 85C

--50 --40C

--55

25C

19

21

23

25

27

Pout, OUTPUT POWER (dBm)

Figure 23. IS--95 Adjacent Channel Power Ratio

versus Output Power

VDC = 5 Vdc, f = 1960 MHz

--40 Single--Carrier IS--95, 9 Channel Forward

885 kHz Measurement Offset

30 kHz Measurement Bandwidth

--50

--60 TC = 85C

--70 25C

--40C

--80

17

19

21

23

25

27

Pout, OUTPUT POWER (dBm)

Figure 24. IS--95 Adjacent Channel Power Ratio

versus Output Power

--20

--30

--40

TC = --40C

85C

--50

25C

--60

--70

16

VDC = 5 Vdc, f = 2140 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)

18

20

22

24

26

Pout, OUTPUT POWER (dBm)

Figure 25. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

RF Device Data

Freescale Semiconductor, Inc.

MMG3004NT1

11

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