UT52L1616MC-10 데이터 시트보기 (PDF) - Utron Technology Inc

부품명

상세내역

일치하는 목록

UT52L1616MC-10

1M X 16 BIT SDRAM

Utron Technology Inc 



UTRON

Preliminary Rev. 0.91

UT52L1616

1M X 16 BIT SDRAM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted,TA = 0 to 70ºC, VIH (min)/ VIL (max) = 2.0V/0.8V)

Parameter

Operating current

(One Bank Active)

Precharge Standby

Current in power-down

mode

Symbol

ICC1

ICC2P

ICC2PS

Test Condition

CAS

Latency

Burst length =1

tRC≥ tRC(min),tCK≥tCK(min),IOL=0mA

CKE= VIL(max), tCK=min

CKE= VIL(max), CLK≤ VIL(max), tCK=∞

Version

Unit Note

-7 -8 -10

100 80 70 mA 1

3

mA

2

mA

Precharge Standby

Current in non power-

down mode

ICC2N

CKE≥ VIH(min), CE ≤ VIH(max),tCK=15ns

Input signals are changed one time during

30ns

50

mA

ICC2NS CKE≥ VIH(min),CLK≤ VIL(max),

tCK=∞Input signals are stable

30

mA

Active Standby Current in ICC3P

power-down mode

ICC3PS

CKE = VIL(max), tCK=min

CKE = VIL(max), CLK≤ VIL(max), tCK=∞

5

mA

3

mA

Active Standby Current ICC3N

In non power-down mode

(One Bank Active)

CKE≥ VIH(min), CE ≤ VIH(max),tCK=15ns

Input signals are changed one time during

30ns

65

mA

ICC3NS CKE≥ VIH(min),CLK≤ VIL(max),tCK=∞

Input signals are stable

25

mA

Operating Current

(Burst Mode)

ICC4

IOL=0mA, Page Burst

All Band Activated. tCk=tCk(min)

BL=4

160 150 140 MA

160 150 140 mA 1

Refresh Current

ICC5

tRC≥ tRC(min)

160 150 140 mA 2

Self Refresh Current

ICC6

CKE≤ 0.2V

2

mA

Notes：1.Measured with outputs open. Addresses are changed only one time during tCk(min).

2.Refresh period is 32ms. Addresses are changed only time during tCk(min).

AC OPERAATING TEST CONDITIONS (VCC=3.3V±0.3V,TA =0 to 70 ℃)

Parameter

Value

Unit

Input levels(Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr / tf=1/1

ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig.1

Ω

2.8 V

Input

Vss

tT

80%

20%

Output

I/O

tT

50 Ω

30P

+1.4 V

Fig.1

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

18

P90004

Share Link: