UT51C164MC-25 데이터 시트보기 (PDF) - Utron Technology Inc
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UT51C164MC-25 Datasheet PDF : 26 Pages
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UTRON
Rev 1.5
UT51C164
256K X 16 BIT EDO DRAM
AC CHARACTERISTICS ( continued )
SYMBOL PARAMETER
25
35
40
50
UNIT NOTE
Min. Max. Min. Max. Min. Max. Min. Max.
Write Command Hold Time
30 tWCR from RAS
19
25
30
40
ns
31
tRWL
Write Command to RAS
Lead Time
8
32 tDS Data in Setup Time
0
33 tDH Data in Hold Time
4
34 tWOH Write to OE Hold time
3
11
12
14
ns
0
0
0
ns *11
5
6
7
ns *11
5
6
8
ns *11
35 tOED OE to Data Delay Time
3
36
tRWC
Read-Modify-Write Cycle
Time
65
Read-Modify-Write Cycle
37 tRRW Time RAS Pulse Width
50
5
6
8
ns *11
105
110
130
ns
70
75
85
ns
38
tCWD
CAS to WE Delay in
Read-Modify-Write Cycle
17
28
30
34
ns *9
39
tRWD
RAS to WE Delay in
Read-Modify-Write Cycle
34
54
58
68
ns *9
40 tCRW CAS pulse Width in RMW 26
46
48
52
ns
Column Address to
41 tAWD WE Delay Time
21
35
38
42
ns *9
42
tPC
EDO Page Mode Read or
Write Cycle Time
10
14
15
19
ns
43 tCP CAS Precharge Time
3
4
5
7
ns
Column Address to
44 tCAR RAS Setup Time
12
18
20
24
ns
45
tCAP
Access Time from Column
Precharge
14
20
23
27 ns *4
Data in Hold Time
46 tDHR Referenced to RAS
19
25
30
40
ns
47
tCSR
CAS Setup Time in CBR
Refresh
5
8
10
10
ns
48
tRPC
RAS to CAS Precharge
Time
0
0
0
0
ns
49
tCHR
CAS Hold Time in CBR
Refresh
7
8
9
12
ns
50
tPCM
EDO Page Mode Cycle
Time in RMW
32
55
60
70
ns
51
tCOH
Output Hold After CAS
Low
3
3
3
3
ns
52
tOES
OE Low to CAS High
Setup Time
4
3
4
6
ns
53
tOEH
OE Hold Time from WE
in RMW Cycle
4
54 tOEP OE Pulse Width
4
55
tREF
Refresh Interval (512
Cycles)
8
5
6
8
ns
8
10
14
ns
8
8
8 ms *14
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
8
P90005
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