UT51C164MC-25 데이터 시트보기 (PDF) - Utron Technology Inc
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UT51C164MC-25 Datasheet PDF : 26 Pages
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UTRON
Rev 1.5
UT51C164
256K X 16 BIT EDO DRAM
DC CHARACTERISTICS (TA = 0℃ to 70ºC, VDD = 5.0 V ± 0.5 V, Vss = 0 V)
SYMBOL PARAMETER
IDD1
Operating Current,
VDD Supply
IDD2
Standby Current
(TTL Input)
IDD3 RAS Only Refresh
Current
IDD4
EDO Page
Current
Mode
IDD5 CBR Refresh Current
SPEED
(tRAC)
-25
-35
-40
-50
-
-25
-35
-40
-50
-25
-35
-40
-50
-25
-35
-40
-50
IDD6
Standby Current
(CMOS Input)
-
VDD Power Supply
-
ILI Input Leakage Current
-
ILO
Output
Current
Leakage
-
VIL Input Low Voltage
-
VIH Input High Voltage
-
VOL Output Low Voltage
-
VOH Output High Voltage
-
UT51C164
Min
Max
-
200
-
190
-
180
-
170
-
3
-
200
-
190
-
180
-
170
-
220
-
220
-
200
-
190
-
200
-
190
-
180
-
170
-
2
4.5
5.5
-10
10
-10
10
-1
0.8
2.4
VDD +1
-
0.4
2.4
-
UNIT TEST CONDITION
mA tRC = tRC (min.)
mA RAS = UCAS = LCAS
=VIH
mA tRC = tRC (min.)
mA tPC = tPC (min.)
mA tRC = tRC (min.)
RAS ≧ VDD-0.2V
mA CAS ≧ VDD-0.2V
All other inputs≧ VSS
V
uA VSS≦ VIN ≦VDD
uA
VSS≦ VOUT ≦VDD
RAS = CAS = VIH
V
V
V IOI = 2mA
V IOH = 2mA
Notes: IDD1, IDD3, IDD4, IDD5 are dependent on output loading and cycle rates. Specified values are obtained with the output
open. IDD is specified as an average current. In IDD1, IDD3, and IDD5 address can be changed maximum once while
RAS =VIL. In IDD4, address can be changed maximum once within one EDO page cycle time, tPC.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
6
P90005
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