MTB20N20E 데이터 시트보기 (PDF) - ON Semiconductor
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MTB20N20E Datasheet PDF : 12 Pages
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MTB20N20E
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
10 TC = 25°C
1.0
10õs
100õs
1Ăms
10Ăms
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
600
ID = 20 A
500
400
300
200
100
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.01
1.0E-05
0.05
0.02
0.01
SINGLE PULSE
1.0E-04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
1.0E-01
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
3.0
RθJA = 50°C/W
Board material = 0.065 mil FR–4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
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