MTB20N20E 데이터 시트보기 (PDF) - ON Semiconductor

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MTB20N20E

Power MOSFET 20 Amps, 200 Volts N–Channel D2PAK

ON Semiconductor 

MTB20N20E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

200

–

–

263

–

Vdc

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0 Vdc)

(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IDSS

µAdc

–

–

10

–

–

100

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

–

4.0

Vdc

–

7.0

–

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 20 Adc)

(ID = 10 Adc, TJ = 125°C)

RDS(on)

–

0.12

0.16

Ohm

VDS(on)

–

–

Vdc

–

3.84

–

3.36

Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)

gFS

8.0

11

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

–

1880 2700

pF

–

378

535

–

68

100

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 100 Vdc, ID = 20 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

td(on)

tr

td(off)

tf

QT

–

17

40

ns

–

86

180

–

50

100

–

60

120

–

54

75

nC

(VDS = 160 Vdc, ID = 20 Adc,

VGS = 10 Vdc)

Q1

–

12

–

Q2

–

24

–

Q3

–

22

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 1.)

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc,

TJ = 125°C)

Reverse Recovery Time

(See Figure 14)

(IS = 20 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

VSD

trr

ta

tb

QRR

Vdc

–

1.0

1.35

–

0.82

–

–

239

–

ns

–

136

–

–

103

–

–

2.09

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

–

4.5

–

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

–

7.5

–

nH

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