MTB20N20E 데이터 시트보기 (PDF) - ON Semiconductor

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MTB20N20E

Power MOSFET 20 Amps, 200 Volts N–Channel D2PAK

ON Semiconductor 

MTB20N20E

TYPICAL ELECTRICAL CHARACTERISTICS

40

TJ = 25°C

30

VGS = 10 V

8V

9V

7V

20

6V

10

5V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

40

VDS ≥ 10 V

35

30

TJ = -55°C

25°C

25

100°C

20

15

10

5

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.35

VGS = 10 V

0.30

0.25

TJ = 100°C

0.20

0.15

25°C

0.10

0.05

04

-55°C

8 12 16 20 24 28 32 36 40

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

0.17

TJ = 25°C

0.16

0.15

0.14

VGS = 10 V

0.13

0.12

15 V

0.11

0.10

0 4 8 12 16 20 24 28 32 36 40

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

2.4

VGS = 10 V

ID = 10 A

2.0

1.6

1.2

0.8

10000

1000

VGS = 0 V

100

10

TJ = 125°C

100°C

25°C

0.4

-50 -25

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

1

0

50

100

150

200

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

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