HEF4511B 데이터 시트보기 (PDF) - NXP Semiconductors.
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HEF4511B Datasheet PDF : 20 Pages
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NXP Semiconductors
HEF4511B
BCD to 7-segment latch/decoder/driver
9. Static characteristics
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter
Conditions VDD Tamb = 40 C
Min Max
Tamb = +25 C
Min Max
Tamb = +85 C
Min Max
Tamb = +125 C
Min Max
Unit
VIH
HIGH-level
IO < 1 A
5V
3.5
-
3.5
-
3.5
-
3.5
-V
input voltage
10 V 7.0
-
7.0
-
7.0
-
7.0
-V
15 V 11.0
-
11.0
-
11.0
-
11.0
-V
VIL
LOW-level
IO < 1 A 5 V
-
1.5
-
1.5
-
1.5
-
1.5 V
input voltage
10 V
-
3.0
-
3.0
-
3.0
-
3.0 V
15 V
-
4.0
-
4.0
-
4.0
-
4.0 V
VOH
HIGH-level
see Table 7 -
output voltage
-
-
-
-
-
-
-
--
VOL
LOW-level
IO < 1 A 5 V
- 0.05
-
0.05
-
0.05
-
0.05 V
output voltage
10 V
-
0.05
-
0.05
-
0.05
-
0.05 V
15 V
-
0.05
-
0.05
-
0.05
-
0.05 V
IOH
HIGH-level
VO = 2.5 V 5 V
-
1.7
-
1.4
-
1.1
-
1.1 mA
output current VO = 4.6 V 5 V
- 0.64 -
0.5
- 0.36
-
0.36 mA
VO = 9.5 V 10 V
- 1.6
-
1.3
-
0.9
-
0.9 mA
VO = 13.5 V 15 V
- 4.2
-
3.4
-
2.4
-
2.4 mA
IOL
LOW-level
VO = 0.4 V 5 V 0.64
-
0.5
-
0.36
-
0.36
- mA
output current VO = 0.5 V 10 V
1.6
-
1.3
-
0.9
-
0.9
- mA
VO = 1.5 V 15 V
4.2
-
3.4
-
2.4
-
2.4
- mA
II
input leakage
current
15 V
-
0.1
-
0.1
-
1.0
-
1.0 A
IDD
supply current IO = 0 A
5V
-
5
-
5
-
150
-
150 A
10 V
-
10
-
10
-
300
-
300 A
15 V
-
20
-
20
-
600
-
600 A
CI
input
capacitance
-
-
-
-
7.5
-
-
-
- pF
HEF4511B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 11 November 2011
© NXP B.V. 2011. All rights reserved.
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