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MM908E625

Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

All characteristics are for the analog chip only. Refer to the 68HC908EY16 specification for characteristics of the

microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.

Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN Receiver

Recessive

Dominant

Threshold

Input Hysteresis

LIN Wake-up Threshold

HIGH SIDE OUTPUT (HS)

Switch ON Resistance @ TJ = 25 °C with ILOAD = 1.0 A

V

VIH

VIL

VITH

VIHY

0.6 VLIN

0.0

–

0.01 VSUP

–

–

VSUP / 2

–

VSUP

0.4 VLIN

–

0.1 VSUP

VWTH

–

VSUP / 2

–

V

RDS(ON)HS

–

600

700

mΩ

High Side Over-current Shutdown

HALF-BRIDGE OUTPUTS (HB1:HB4)

Switch ON Resistance @ TJ = 25 °C with ILOAD = 1.0 A

High Side

Low Side

High Side Over-current Shutdown

Low Side Over-current Shutdown

Low Side Current Limitation @ TJ = 25°C

Current Limit 1 (CLS2 = 0, CLS1 = 1, CLS0 = 1)

Current Limit 2 (CLS2 = 1, CLS1 = 0, CLS0 = 0)

Current Limit 3 (CLS2 = 1, CLS1 = 0, CLS0 = 1)

Current Limit 4 (CLS2 = 1, CLS1 = 1, CLS0 = 0)

Current Limit 5 (CLS2 = 1, CLS1 = 1, CLS0 = 1)

IHSOC

3.9

–

7.0

A

mΩ

RDS(ON)HB_HS

–

RDS(ON)HB_LS

–

425

500

400

500

IHBHSOC

4.0

–

7.5

A

IHBLSOC

2.8

–

7.5

A

mA

ICL1

–

55

–

ICL2

210

260

315

ICL3

300

370

440

ICL4

450

550

650

ICL5

600

740

880

Half-bridge Output High Threshold for BEMF Detection

Half-bridge Output Low Threshold for BEMF Detection

Hysteresis for BEMF Detection

Low Side Current-to-Voltage Ratio (VADOUT [V]/IHB [A])

CSA = 1

CSA = 0

VBEMFH

–

- 30

0

V

VBEMFL

–

- 60

- 5.0

mV

VBEMFHY

–

30

–

mV

V/A

RATIOH

7.0

12.0

14.0

RATIOL

1.0

2.0

3.0

SWITCHABLE VDD OUTPUT (PH.D.)

Over-current Shutdown Threshold

VSUP DOWN-SCALER

Voltage Ratio (RATIOVSUP = VSUP /VADOUT)

IHVDDOCT

24

RATIOVSUP

4.8

30

40

mA

5.1

5.35

–

INTERNAL DIE TEMPERATURE SENSOR

Voltage/Temperature Slope

Output Voltage @ 25 °C

HALL-EFFECT SENSOR INPUTS (H1:H3)

Output Voltage

VSUP < 16.2 V

VSUP > 16.2 V

STTOV

VT25

VHALL1

VHALL2

–

19

–

1.7

2.1

2.5

–

VSUP - 1.2

–

–

–

15

mV/ °C

V

V

908E625

8

Analog Integrated Circuit Device Data

Freescale Semiconductor

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