ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
All characteristics are for the analog chip only. Please refer to the specification for 68HC908EY16 for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
Propagation Delay (13), (14)
TXD Low to LIN Low
TXD High to LIN High
LIN Low to RXD Low
LIN High to RXD High
TXD Symmetry
RXD Symmetry
Output Falling Edge Slew Rate (13), (15)
80% to 20%
Output Rising Edge Slew Rate (13), (15)
20% to 80%, RBUS > 1.0 kΩ, CBUS < 10 nF
LIN Rise/Fall Slew Rate Symmetry (13), (15)
μs
t TXD-LIN-low
–
–
6.0
t TXD-LIN-high
–
–
6.0
t LIN-RXD-low
–
4.0
8.0
t LIN-RXD-
–
4.0
8.0
high
- 2.0
–
2.0
t TXD-SYM
- 2.0
–
2.0
t RXD-SYM
SRF
V/μs
-1.0
- 2.0
- 3.0
SRR
V/μs
1.0
2.0
3.0
SRS
- 2.0
–
2.0
μs
HALL-EFFECT SENSOR INPUTS (H1:H3)
Propagation Delay
t HPPD
–
1.0
–
μs
AUTONOMOUS WATCHDOG (AWD)
AWD Oscillator Period
AWD Period Low = 512 tOSC
TJ < 25 °C
TJ ≥ 25 °C
t OSC
–
40
–
μs
t AWDPH
ms
16
27
34
16
22
28
AWD Period High = 256 tOSC
TJ < 25 °C
TJ ≥ 25 °C
t AWDPL
ms
8.0
13.5
17
8.0
11
14
AWD Cyclic Wake-up On Time
t AWDHPON
–
90
–
μs
Notes
13. All LIN characteristics are for initial LIN slew rate selection (20 kBaud) (SRS0:SRS1= 00).
14. See Figure 2.
15. See Figure 3.
908E625
10
Analog Integrated Circuit Device Data
Freescale Semiconductor