FDB12N50(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB12N50 Datasheet PDF : 8 Pages
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Typical Characteristics
Figure 1. On-Region Characteristics
30 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
Figure 2. Transfer Characteristics
40
10
150oC
-55oC
25oC
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
1
10
20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.4
0.1
4
*Notes:
1. VDS = 20V
2. 250s Pulse Test
6
8
10
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
1.2
1.0
0.8
0.6
0.4
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
5
10
15
20
25
ID, Drain Current [A]
150oC
10
25oC
*Notes:
1. VGS = 0V
1
2. 250s Pulse Test
0.3
0.6
0.9
1.2
1.5
1.8
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
1000
500
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
0
*Note: ID = 11.5A
0
5
10
15
20
25
Qg, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
3
FDB12N50TM Rev. C1
www.fairchildsemi.com
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