FDB12N50(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB12N50 Datasheet PDF : 8 Pages
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FDB12N50TM
N-Channel UniFETTM MOSFET
500 V, 11.5 A, 650 m
Features
• RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 22 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
S
D2-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FDB12N50TM
500
±30
11.5
6.9
46
456
11.5
16.7
4.5
165
1.33
-55 to +150
300
FDB12N50TM
0.75
62.5
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
1
FDB12N50TM Rev. C1
www.fairchildsemi.com
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