FDB12N50(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDB12N50
(Rev.:2013)

N-Channel UniFET™ MOSFET

Fairchild Semiconductor 

Package Marking and Ordering Information

Device Marking

FDB12N50

Device

FDB12N50TM

Package

D2-PAK

Reel Size

330mm

Tape Width

24mm

Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

BVDSS

/ TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250A, VGS = 0V, TJ = 25oC

500

ID = 250A, Referenced to 25oC

-

VDS = 500V, VGS = 0V

-

VDS = 400V, TC = 125oC

-

VGS = ±30V, VDS = 0V

-

On Characteristics

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250A

3.0

RDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 6A

-

gFS

Forward Transconductance

VDS = 25V, ID = 6A

-

Dynamic Characteristics

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V

f = 1MHz

VDS = 400V, ID = 11.5A

VGS = 10V

-

-

-

-

-

(Note 4)

-

Switching Characteristics

td(on)

tr

td(off)

tf

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VDD = 250V, ID = 11.5A

RG = 25

-

-

-

(Note 4)

-

Drain-Source Diode Characteristics

IS

Maximum Continuous Drain to Source Diode Forward Current

-

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 11.5A

-

trr

Reverse Recovery Time

VGS = 0V, ISD = 11.5A

-

Qrr

Reverse Recovery Charge

dIF/dt = 100A/s

-

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C

3. ISD  11.5A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C

4. Essentially Independent of Operating Temperature Typical Characteristics

Typ.

-

0.66

-

-

-

-

0.55

11

985

140

12

22

6

10

25

60

45

35

-

-

-

370

3.8

Quantity

800 units

Max. Unit

-

-

1

10

±100

V

V/oC

A

nA

5.0

V

0.65



-

S

1315 pF

190

pF

17

pF

30

nC

-

nC

-

nC

60

ns

130

ns

105

ns

85

ns

11.5

A

46

A

1.4

V

-

ns

-

C

©2007 Fairchild Semiconductor Corporation

2

FDB12N50TM Rev. C1

www.fairchildsemi.com

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