NXP Semiconductors
High-speed switching diode
Product data sheet
BAS216
10 5
IR
(nA)
10 4
10 3
10 2
10
0
V R = 75 V
75 V
25 V
MSA563
100
Tj (oC)
200
0.6
handbook, halfpage
Cd
(pF)
0.5
0.4
0.2
0
0
4
MBH285
8
12 VR (V) 16
Dotted line: maximum values.
Solid lines: typical values.
Fig.5 Reverse current as a function of junction
temperature.
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2002 May 28
5