BAS216 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS216 Datasheet PDF : 9 Pages
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NXP Semiconductors
High-speed switching diode
Product data sheet
BAS216
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MIN.
see Fig.3
IF = 1 mA
−
IF = 10 mA
−
IF = 50 mA
−
IF = 150 mA
−
see Fig.5
VR = 25 V
−
VR = 75 V
−
VR = 25 V; Tj = 150 °C
−
VR = 75 V; Tj = 150 °C
−
f = 1 MHz; VR = 0; see Fig.6
−
when switched from IF = 10 mA to −
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
when switched from IF = 10 mA; −
tr = 20 ns; see Fig.8
MAX. UNIT
715
mV
855
mV
1
V
1.25
V
30
nA
1
µA
30
µA
50
µA
1.5
pF
4
ns
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
200
315
UNIT
K/W
K/W
2002 May 28
3
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