BAS216 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS216 Datasheet PDF : 9 Pages
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NXP Semiconductors
High-speed switching diode
Product data sheet
BAS216
FEATURES
• Small ceramic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
handbook, 4 columns
a
k
cathode mark
k
a
bottom view
Marking code: A6.
side view
top view
MAM139
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C; see Fig.2; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
85
75
250
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
400
mW
−65
+150 °C
−
150
°C
2002 May 28
2
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