SS24T3G(2005) 데이터 시트보기 (PDF) - ON Semiconductor
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SS24T3G Datasheet PDF : 6 Pages
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SS22, SS24
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SS22
SS24
VRRM
VRWM
VR
V
20
40
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
100 kHz, TC = 105°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFRM
IFSM
2.0
A
3.0
A
75
A
Storage/Operating Case Temperature
Tstg, TC
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR = 40 V)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
Symbol
RqJL
RqJA
vF
IR
Value
24
80
Unit
°C/W
TJ = 25°C TJ = 125°C
V
0.50
0.46
TJ = 25°C TJ = 100°C
mA
0.4
5.7
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