SS24T3G(2005) 데이터 시트보기 (PDF) - ON Semiconductor
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SS24T3G Datasheet PDF : 6 Pages
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SS22, SS24
1000
125
TJ = 25°C
115
Rtja = 24°C/W
43°C/W
105
63°C/W
100
95
80°C/W
85
93°C/W
75
10
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
65
0 5.0 10 15 20 25 30 35 40
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1.0E+00
50%
20%
1.0E−01 10%
5.0%
1.0E−02 2.0%
1.0%
1.0E−03
Rtjl(t) = Rtjl*r(t)
1.0E−04
0.00001
0.0001
1.0E+00 50%
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 9. Thermal Response — Junction to Case
100
1000
1.0E−01
20%
10%
5.0%
1.0E−02 2.0%
1.0E−03 1.0%
1.0E−04
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 10. Thermal Response — Junction to Ambient
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4
100
1000
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