STTH3R06RL 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3R06RL Datasheet PDF : 9 Pages
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STTH3R06
Figure 7: Softness factor versus dIF/dt (typical
values)
S factor
3.0
IF=IF(AV)
VR=400V
2.5 Tj=125°C
2.0
1.5
1.0
0.5
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8: Relative variations of dynamic
parameters versus junction temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
S factor
IRM
QRR
Tj(°C)
50
75
IF=IF(AV)
VR=400V
Reference: Tj=125°C
100
125
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
20
18
IF=IF(AV)
Tj=125°C
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0
20
40
60
80 100 120 140 160 180 200
Figure 10: Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
200
180
160
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
140
120
100
80
60
40
20
0
0
20
40
dIF/dt(A/µs)
60
80
100 120 140 160 180 200
Figure 11: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 12: Thermal resistance junction to
ambient versus copper surface under lead
(epoxy FR4, eCU=35µm) (DO-201AD)
Rth(j-a)(°C/W)
80
70
60
DO-201AD
50
40
30
20
10
SCU(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
4/9
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