STTH3R06RL 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3R06RL Datasheet PDF : 9 Pages
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STTH3R06
Figure 1: Conduction losses versus average
current
P(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
δ = 0.05
1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
1.5
2.0
2.5
δ=tp/T
tp
3.0
3.5
4.0
Figure 2: Forward voltage drop versus forward
current
IFM(A)
50
45
40
35
30
25
20
15
10
5
0
0.0
0.5
Tj=150°C
(maximum values)
Tj=150°C
(typical values)
VFM(V)
1.0
1.5
2.0
2.5
Tj=25°C
(maximum values)
3.0
3.5
4.0
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
printed circuit FR4, Lleads = 10mm, SCU=1cm2)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
SMC
0.5
SCu = 1cm2
0.4
SMB
SCu = 1cm2
0.3
Single pulse
0.2
0.1
0.0
1.E-01
1.E+00
DO-201AD
Lleads = 10mm
tp(s)
1.E+01
1.E+02
1.E+03
Figure 4: Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
13
12 VR=400V
Tj=125°C
11
IF=2 x IF(AV)
10
9
IF=IF(AV)
8
IF=0.5 x IF(AV)
7
6
IF=0.25 x IF(AV)
5
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 5: Reverse recovery time versus dIF/dt
(typical values)
trr(ns)
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
50
IF=2 x IF(AV)
IF=IF(AV)
VR=400V
Tj=125°C
IF=0.5 x IF(AV)
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 6: Reverse recovery charges versus
dIF/dt (typical values)
Qrr(nC)
450
400
VR=400V
Tj=125°C
350
IF=2 x IF(AV)
300
250
200
150
IF=IF(AV)
IF=0.5 x IF(AV)
100
50
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
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