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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

STTH3R06RL 데이터 시트보기 (PDF) - STMicroelectronics

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STTH3R06RL
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH3R06RL Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STTH3R06
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
δ = 0.5
DO-201AD
SMB
SMC
IFSM Surge non repetitive forward current DO-201AD
SMB / SMC
Tstg Storage temperature range
Tj Maximum operating junction temperature
Tl = 80°C
Tl = 55°C
Tl = 80°C
tp = 10ms
sinusoidal
Value
Unit
600
V
10
A
3
A
55
A
45
-65 to + 175 °C
175
°C
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-l) Junction to lead
DO-201AD
SMB
SMC
Rth(j-a) Junction to ambient (see fig. 13)
DO-201AD
L = 10 mm
L = 10 mm
Maximum
20
25
20
75
Unit
°C/W
°C/W
Table 5: Static Electrical Characteristics
Symbol
Parameter
Test conditions
IR Reverse leakage current
VF Forward voltage drop
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VR = VRRM
IF = 3A
Min. Typ Max. Unit
3
µA
15 100
1.7
V
1.0 1.25
To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.09 IF2(RMS)
Table 6: Dynamic Characteristics
Symbol Parameter
trr Reverse recovery
time
tfr Forward recovery
time
VFP Forward recovery
voltage
Tj = 25°C
Tj = 25°C
Test conditions
Min.
IF = 0.5A IRR = 0.25A IR = 1A
IF = 1A dIF/dt = -50 A/µs VR =30V
IF = 3A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
IF = 3A dIF/dt = 100 A/µs
Typ Max. Unit
30 ns
35
100 ns
10 V
2/9

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