XC9119D10A 데이터 시트보기 (PDF) - TOREX SEMICONDUCTOR
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XC9119D10A
TOREX SEMICONDUCTOR
XC9119D10A Datasheet PDF : 18 Pages
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XC9119D10A Series
■ELECTRICAL CHARACTERISTICS
XC9119D10AMR
PARAMETER
SYMBOL
CONDITIONS
MIN.
FB Voltage
Line Regulation
Supply Voltage
Operation Start-up
Voltage
Supply Current 1
Supply Current 2
Stand-by Current
Oscillation Frequency
Maximum Duty Ratio
Efficiency (*1)
Current Limit
Lx Operating Voltage
Range
Lx Switch On Resistance
Lx Leak Current
CE “High” Voltage
CE “Low” Voltage
Soft-Start
Threshold Voltage
CE “High” Current
CE “Low” Current
FB “High” Current
FB “Low” Current
VFB
△VFB/
△VIN・VFB
VDD
-
2.5<VDD<6.0V
-
VST1
IOUT=0mA
IDD1
IDD2
ISTB
FOSC
MAXDTY
EFFI
ILIM
FB=2.0V
VCE=0V
Same as IDD1
Same as IDD1
VIN=VDD=3.6V, VOUT=15V,
IOUT=10mA
VDD=3.6V
VLx
VOUT=18V
RSWON
ILxL
VCEH
VCEL
VSST
ICEH
ICEL
IFBH
IFBL
VDD=3.6V, VLx=0.4V, Rpull=10Ω
Same as ISTB
Applied voltage to CE when Lx pin
voltage holding “H””L” level
Applied voltage to CE when Lx pin
voltage holding “H” level
FB=0.95V, Applied voltage to CE
when Lx voltage holding “H””L” level
Same as IDD2
Same as ISTB
Same as IDD2
Same as ISTB
0.980
-
2.5
-
-
-
-
0.8
86
-
310
-
-
-
0.65
-
1.3
-0.1
-0.1
-0.1
-0.1
Test Condition: Unless otherwise stated, VIN=3.0V, VCE=3.0V, Vpull=5.0V, Rpull=100Ω.
NOTE:
*1: EFFI={(output voltage x output current) / (input voltage) x (input current)} x 100
TYP.
1.000
0.05
-
-
450
55
-
1.0
92
86
400
-
2.0
-
-
-
1.6
-
-
-
-
MAX.
1.020
0.20
6.0
2.5
700
110
1.0
1.2
98
-
750
20.0
4.0
1
-
0.20
1.9
0.1
0.1
0.1
0.1
Ta = 25 OC
UNIT
CIRCUI
T
V
①
%/V
①
V
①
V
②
μA
②
μA
②
μA
③
MHz
②
%
②
%
①
mA
④
V
①
Ω
α
μA
③
V
②
V
②
V
②
μA
③
μA
③
μA
③
μA
③
■TYPICAL APPLICATION CIRCUIT
VIN
2.5V~6.0V
Vcont
(above 2.5V)
RSS
C IN
C SS
L
V DD
Lx
CE/SS
FB
V SS
SD
RFB1
RFB2
VOUT
(up to 19.5V)
C FB
CL
4/18
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