K30A06N1 데이터 시트보기 (PDF) - Toshiba

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K30A06N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

Toshiba 

TK30A06N1

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V





±0.1

µA

Drain cut-off current

IDSS

VDS = 60 V, VGS = 0 V





10

Drain-source breakdown voltage

Drain-source breakdown voltage

(Note 4)

V(BR)DSS ID = 10 mA, VGS = 0 V

V(BR)DSX ID = 10 mA, VGS = -20 V

60





V

45





Gate threshold voltage

Vth

VDS = 10 V, ID = 0.2 mA

2.0



4.0

Drain-source on-resistance

RDS(ON) VGS = 10 V, ID = 15 A



12.2 15.0 mΩ

Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Gate resistance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

Test Condition

Ciss

Crss

Coss

rg

tr

ton

tf

toff

VDS = 30 V, VGS = 0 V, f = 1 MHz



See Figure 6.2.1.

Min Typ. Max Unit

 1050 

pF



33





400





3.9



Ω



7.3



ns



21





7.3





28



Fig. 6.2.1 Switching Time Test Circuit

6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Gate switch charge

Symbol

Test Condition

Qg

VDD ≈ 48 V, VGS = 10 V, ID = 30 A

Qgs1

Qgd

QSW

Min Typ. Max Unit



16



nC



5.2





4.4





6.8



3

2012-09-20

Rev.4.0

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