K30A06N1 데이터 시트보기 (PDF) - Toshiba
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K30A06N1 Datasheet PDF : 9 Pages
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TK30A06N1
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
43
A
Drain current (DC)
(Tc = 25)
(Note 1)
ID
30
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
95
Power dissipation
(Tc = 25)
PD
25
W
Single-pulse avalanche energy
(Note 3)
EAS
38
mJ
Avalanche current
IAR
30
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Limited by silicon chip capability.
Note 3: VDD = 48 V, Tch = 25 (initial), L = 32.8 µH, IAR = 30 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
5.00
/W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2012-09-20
Rev.4.0
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