K30A06N1 데이터 시트보기 (PDF) - Toshiba

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K30A06N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

Toshiba 

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK30A06N1

1. Applications

• Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

TK30A06N1

TO-220SIS

1: Gate

2: Drain

3: Source

1

2012-09-20

Rev.4.0

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