TC58NVG0S3AFT05 데이터 시트보기 (PDF) - Toshiba
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TC58NVG0S3AFT05 Datasheet PDF : 33 Pages
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TC58NVG0S3AFT05
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C, VCC = 2.7 V~3.6 V)
SYMBOL
PARAMETER
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tWW
tRR
tRW
tRP
tRC
tREA
tCEA
tCLEA
tALEA
tREAID
tOH
tRHZ
tCHZ
tREH
tIR
tRSTO
tCSTO
tCLSTO
tRHW
tWHC
tWHR
tCR
tR
tWB
tRST
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
WP High to WE Low
Ready to RE Falling Edge
Ready to WE Falling Edge
Read Pulse Width
Read Cycle Time
RE Access Time (Serial Data Access)
CE Access Time
CLE Access Time
ALE Access Time
RE Access Time (ID Read)
Data Output Hold Time
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
Output-High-impedance-to- RE Falling Edge
RE Access Time (Status Read)
CE Access Time (Status Read)
CLE Access Time (Status Read)
RE High to WE Low
WE High to CE Low
WE High to RE Low
CE Low to RE Low (ID Read)
Memory Cell Array to Starting Address
WE High to Busy
Device Reset Time (Read/Program/Erase)
MIN
MAX
UNIT
NOTES
0
ns
10
ns
0
ns
10
ns
25
ns
0
ns
10
ns
20
ns
10
ns
50
ns
15
ns
100
ns
20
ns
20
ns
35
ns
50
ns
35
ns
45
ns
45
ns
45
ns
35
ns
10
ns
30
ns
20
ns
15
ns
0
ns
35
ns
45
ns
45
ns
30
ns
30
ns
30
ns
100
ns
25
µs
200
ns
6/10/500
µs
2003-08-20A 4/33
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