STTH512 데이터 시트보기 (PDF) - STMicroelectronics
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STTH512 Datasheet PDF : 10 Pages
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Characteristics
STTH512
IRM(A)
28
26 VR=600V
Tj=125°C
24
trr(ns)
600
550
500
VR=600V
Tj=125°C
22
IF=2 x IF(AV)
20
18
IF=IF(AV)
16
IF=0.5 x IF(AV)
14
450
400
350
300
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
12
250
10
8
6
4
2
dIF/dt(A/µs)
0
200
150
100
50
dIF/dt(A/µs)
0
0
100
200
300
400
500
0
100
200
300
400
500
Figure 7. Reverse recovery charges
versus dIF/dt (typical values)
2000
1800
Qrr(nC)
VR=600V
Tj=125°C
1600
IF=2 x IF(AV)
1400
1200
1000
800
IF=IF(AV)
IF=0.5 x IF(AV)
600
400
200
0
0
dIF/dt(A/µs)
100
200
300
400
500
Figure 8. Softness factor versus dIF/dt
(typical values)
S factor
4.0
3.5
IF ≤ 2xIF(AV)
VR=600V
Tj=125°C
3.0
2.5
2.0
1.5
1.0
0.5
0
dIF/dt(A/µs)
100
200
300
400
500
Figure 9.
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
Relative variations of dynamic
parameters versus junction
temperature
S factor
IF=IF(AV)
VR=600V
Reference: Tj=125°C
trr
IRM
QRR
Tj(°C)
50
75
100
125
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
50
IF=IF(AV)
45
Tj=125°C
40
35
30
25
20
15
10
5
0
0
50
dIF/dt(A/µs)
100
150
200
250
300
4/10
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