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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

STTH512 데이터 시트보기 (PDF) - STMicroelectronics

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STTH512
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH512 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
STTH512
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
TO-220AC / TO-220FPAC
DPAK
1200
V
30
A
10
IF(AV) Average forward current, δ = 0.5
TO-220AC / DPAK Tc = 145° C
5
A
TO-220FPAC
Tc = 105° C
IFRM Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
60
A
IFSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
55
A
Tstg Storage temperature range
-65 to + 175 °C
Tj
Maximum operating junction temperature
175
°C
Table 2. Thermal parameters
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AC / DPAK
TO-220FPAC
Value
2.5
5.8
Unit
°C/W
Table 3.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
IF = 5 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.08 IF2(RMS)
5
µA
3
30
2.2
1.30 2.0
V
1.25 1.9
Table 4.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min. Typ Max. Unit
trr Reverse recovery time
IRM Reverse recovery current
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
IF = 5 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
95
ns
48 70
11 16
A
2/10

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