STTH312 데이터 시트보기 (PDF) - STMicroelectronics
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STTH312 Datasheet PDF : 8 Pages
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Characteristics
STTH312
Figure 5.
trr(ns)
400
350
300
250
200
150
100
50
0
0
50
Reverse recovery time versus
dIF/dt (typical values)
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
VR=600V
Tj=125°C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
1200
Qrr(nC)
VR=600V
Tj=125°C
1000
IF=2 x IF(AV)
800
600
IF=IF(AV)
IF=0.5 x IF(AV)
400
200
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7. Softness factor versus
dIF/dt (typical values)
S factor
3.5
3.0
IF ≤ 2xIF(AV)
VR=600V
Tj=125°C
2.5
2.0
1.5
1.0
0.5
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
trr
IRM
QRR
50
Tj(°C)
75
IF=IF(AV)
VR=600V
Reference: Tj=125°C
100
125
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
60
55
IF=IF(AV)
Tj=125°C
50
45
40
35
30
25
20
15
10
5
0
0 25 50
dIF/dt(A/µs)
75 100 125 150 175 200 225 250 275 300
Figure 10. Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
700
600
IF=IF(AV)
VFR=1.5 x VF max.
Tj=125°C
500
400
300
200
100
0
0
dIF/dt(A/µs)
100
200
300
400
500
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